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The BCM846BSH-Q is a matched NPN/NPN double transistor housed in a SOT363 (TSSOP6) surface-mounted package. It features a collector-emitter voltage of 65 V and a continuous collector current of 100 mA per transistor. The device offers a typical DC current gain (hFE) of 300 at 2 mA, with tight matching between the two transistors: hFE ratio within 0.95 to 1.05 and base-emitter voltage difference under 2 mV. Key electrical characteristics include a low collector capacitance of 1.2 pF and a transition frequency of 100 MHz. It supports junction temperatures up to 175 °C and is qualified according to AEC-Q101 for automotive use.
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct packaging and marking codes. Confirm that the SOT363 footprint matches your PCB design guidelines. Ensure the application environment stays within the specified thermal limits to maintain reliability. Check for any recent revision updates to the datasheet before finalizing component selection.
Select this component when precise matching between two NPN transistors is required in a minimal footprint. The SOT363 package is suitable for space-constrained designs. Consider the 65 V rating and 100 mA current limit for circuit constraints. The AEC-Q101 qualification makes it appropriate for automotive systems requiring high reliability and temperature stability.
This part is the NPN/NPN complement to the PNP/PNP BCM856BSH-Q. Both devices share the same SOT363 package and automotive qualification standards. They are designed as drop-in replacements for standard double transistors in existing designs, offering improved matching and performance in a compact surface-mount form factor.
The BCM856BSH-Q is the PNP/PNP complement. For direct replacement of standard double transistors, verify pin compatibility and electrical parameters against the original component specifications to ensure functional equivalence in the target circuit.