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The BCM847BSH-QX is an NPN/NPN matched double transistor from Nexperia, housed in a TSSOP6 (SOT363) surface-mounted plastic package. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor. The device offers a DC current gain range of 200 to 450 at 2 mA. Key matching specifications include a DC current gain ratio between 0.95 and 1.05, and a base-emitter voltage difference of no more than 2 mV. Qualified under AEC-Q101, it supports junction temperatures up to 175 °C.
Verify the specific ordering code suffix against the manufacturer's official documentation to confirm packaging details. Ensure the component meets the required AEC-Q101 qualification standards for your target application environment before finalizing procurement decisions.
Select this component when precise matching between dual NPN transistors is required within a compact SOT363 footprint. Consider its high-temperature capability and low saturation voltage for designs demanding tight performance tolerances in automotive or industrial environments.
This part belongs to Nexperia's BCM847xSH-Q series of matched double transistors. It serves as the NPN counterpart to the PNP/PNP BCM857BSH-Q. Both are designed for general-purpose switching and amplification in small surface-mount packages suitable for automated assembly.
BCM857BSH-QX is the PNP/PNP complement. Standard double transistors may serve as drop-in replacements if matching specifications are not critical.
The maximum junction temperature is 175 °C.
The difference between the base-emitter voltages of the two transistors is limited to a maximum of 2 mV under specified test conditions.
Yes, the product is qualified according to the AEC-Q101 standard and is recommended for automotive applications.