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The BCM847BV,115 is an NPN/NPN matched double transistor housed in a SOT666 ultra-small Surface-Mounted Device plastic package. The internal transistors are fully isolated. Key electrical parameters include a collector-emitter voltage (VCEO) of 45 V and a maximum collector current (IC) of 100 mA per transistor. The DC current gain (hFE) ranges from 200 to 450 at IC = 2 mA and VCE = 5 V. Matching specifications ensure hFE1/hFE2 ratios between 0.9 and 1, with base-emitter voltage matching (VBE1−VBE2) limited to a maximum of 2 mV under identical biasing conditions.
Verify the component status before design finalization, as product availability may change. Confirm that the specific ordering suffix matches the required packaging format. Ensure the application environment remains within the specified thermal and electrical limiting values to prevent permanent device damage.
Select this component when tight matching between dual NPN transistors is required for precision analog applications. Verify that the SOT666 package dimensions fit the PCB layout constraints. Ensure the design operates within the 45 V collector-emitter voltage and 100 mA collector current limits per transistor.
This part serves as the matched version of the BC847BV single transistor type. It functions as the NPN counterpart to the PNP/PNP BMC857BV complement. The device belongs to Nexperia's family of small signal matched double transistors designed for compact surface-mount designs.
BCM847BS,115
The base-emitter voltage matching (VBE1−VBE2) is specified with a maximum deviation of 2 mV when measured at VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.
No. The data sheet explicitly states that this product is not automotive qualified and has not been tested according to automotive requirements.
Reflow soldering is the only recommended soldering method for this component.