ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS 2NPN 45V 100MA DFN1010B-6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 NPN (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：45V
- Vce Saturation (Max) @ Ib, Ic：400mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：350mW
- Frequency - Transition：100MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-XFDFN Exposed Pad
- Supplier Device Package：DFN1010B-6
- Grade：Automotive
- Qualification：AEC-Q101
Download product information
Overview
The BCM847QASZ is an NPN/NPN matched double transistor in a DFN1010B-6 (SOT1216) leadless surface-mounted package. It features a collector-emitter voltage of 45 V and a continuous collector current of 100 mA per transistor, with a peak pulse current of 200 mA. The device provides a minimum DC current gain of 200 at 2 mA and 5 V. Key matching specifications include a DC current gain ratio between 0.95 and 1.05 and a base-emitter voltage difference of no more than 2 mV under identical bias conditions. Total power dissipation is rated at 350 mW for the dual device.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Optimized pinout for current mirror and differential amplifier circuits
- Low profile package height of 0.37 mm
Applications
- Current mirror
- Differential amplifier
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the component meets AEC-Q101 requirements if intended for automotive use. Ensure design parameters remain within the absolute maximum ratings defined in the datasheet to prevent permanent damage.
Selection Notes
Select this component when precise matching between two NPN transistors is required for analog signal processing. The low thermal resistance and small footprint make it suitable for space-constrained designs. Verify that the operating temperature range and power dissipation limits align with the target application environment.
Part Context
This part belongs to Nexperia's family of matched double transistors designed for high-performance analog applications. It serves as the NPN counterpart to the PNP/PNP BCM857QAS. The device utilizes a plastic thermal-enhanced ultra-thin small outline package without leads, facilitating automated assembly and reducing overall component count in circuit designs.
Replacement Considerations
BCM857QAS
FAQ
What is the maximum base-emitter voltage mismatch specified for this device?
The base-emitter voltage difference (VBE1−VBE2) is limited to a maximum of 2 mV when measured at VCE = 5 V, IC = 2 mA, and Tamb = 25 °C.
Is this component suitable for automotive electronics?
Yes, the BCM847QAS has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.
What is the transition frequency of the transistor?
The transition frequency (fT) is typically 100 MHz when measured at VCE = 5 V, IC = 10 mA, and f = 100 MHz.
