BCM856DS-QX

Overview

The BCM856DS-Q is a PNP/PNP matched double transistor manufactured by Nexperia, housed in an SOT457 (SC-74) TSOP6 surface-mount package. It features fully isolated internal transistors and is qualified under AEC-Q101 for automotive applications. Key electrical parameters include a collector-emitter voltage of -65 V and a continuous collector current of -100 mA per transistor. The DC current gain ranges from 200 to 450 at VCE = -5 V and IC = -2 mA. The device ensures tight matching with a base-emitter voltage difference of max 2 mV and a current gain ratio between 0.9 and 1.

Feature Summary

• Current gain and base-emitter voltage matching for precision circuitry
• AEC-Q101 qualification suitable for automotive environments
• Fully isolated internal transistors within a compact SMD package

Applications

• Current mirror circuits
• Differential amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as tape-and-reel specifications. Confirm that the component status remains active production before finalizing procurement plans. Ensure compatibility with standard reflow soldering profiles defined for the SOT457 package outline.

Selection Notes

Select this component when precise matching between two PNP transistors is required in space-constrained designs. The SOT457 package offers a smaller footprint compared to conventional leaded options. Consider the thermal resistance characteristics and power dissipation limits relative to the intended PCB copper area and ambient operating conditions.

Part Context

This part belongs to Nexperia's portfolio of general-purpose bipolar junction transistors designed for surface-mount technology. The BCM856DS variant serves as a matched pair solution, providing consistent electrical characteristics between the two integrated transistors. It is engineered to replace standard discrete double transistors while reducing board space and component count.

Replacement Considerations

The datasheet identifies this component as a drop-in replacement for standard double transistors. Verify pinout compatibility and electrical ratings against existing legacy components before substitution.

FAQ

What is the maximum collector-base voltage for the BCM856DS-Q?

The maximum collector-base voltage (VCBO) is -80 V with the emitter open.

How are the two transistors internally connected?

The transistors are fully isolated internally within the SOT457 package.

What is the typical transition frequency of the device?

The typical transition frequency (fT) is 175 MHz at VCE = -5 V and IC = -10 mA.