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The BCM857BS/ZLF is a PNP/PNP matched double transistor housed in the SOT363-3 (SC-88) TSSOP6 surface-mounted package. It features fully isolated internal transistors with a collector-emitter voltage of -45 V and a continuous collector current of -100 mA per device. The DC current gain ranges from 200 to 450 at -2 mA, with a transition frequency up to 175 MHz. Total power dissipation is limited to 300 mW for the dual device and 200 mW per transistor. Operating temperatures span from -65 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm package type and compliance status. Confirm that the ZLF designation aligns with the required lead-free specifications for your assembly process. Cross-reference the part number with the latest Nexperia datasheet revision to ensure compatibility with current manufacturing standards.
Select this component when precise matching between two PNP transistors is required within a compact footprint. Ensure the application operates within the -45 V collector-emitter voltage limit and does not exceed the 300 mW total power dissipation rating. Verify thermal management requirements given the small SOT363-3 package size and ambient temperature constraints.
This component belongs to the BCM857 series of matched double transistors manufactured by Nexperia. It serves as a compact solution for applications requiring paired PNP transistors with high gain matching. The device is designed for surface-mount technology, offering a small outline suitable for space-constrained electronic designs.
BCM857BV
The maximum emitter-base voltage (VEBO) is -5 V.
No, the BCM857BS is not automotive qualified. For automotive applications, refer to Nexperia's -Q product alternatives.
The marking code is A9 followed by a placeholder for the manufacturing site code.