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The BeRex BCP030C-70 is a GaAs Power pHEMT featuring a 0.25µm by 300µm recessed gate architecture, designed for high efficiency across 1000 MHz to 26 GHz. It utilizes a 70 mils ceramic Micro-X surface-mount package. At 12 GHz with Vds = 6V and Ids = 50% Idss, typical P1dB output power reaches 23.0 dBm (power tuned) or 19.0 dBm (gain tuned), with corresponding power gain of 11.5 dB and 14.0 dB respectively. PAE typically achieves 55% at 12 GHz and 55% at 18 GHz under power-tuned conditions. The device supports a maximum drain-source voltage of 12 V and total power dissipation up to 420 mW.
Verify the specific revision level against the manufacturer's latest documentation before finalizing designs. Confirm that the ordering suffix matches the required lot tracking code. Ensure thermal management solutions align with the specified junction temperature limits and thermal resistance values provided in the datasheet.
Select this component when designing circuits requiring high linearity and efficiency in the microwave spectrum. Consider both power-tuned and gain-tuned configurations based on whether maximizing output power or maintaining consistent gain is the primary design objective. Evaluate the 70 mils Micro-X package dimensions for PCB layout compatibility.
This part belongs to the BeRex BCP030 series of GaAs Power pHEMTs. It shares the same 0.25µm gate technology but differs in packaging and specific electrical tuning compared to other variants like the BCP020T-70. The 'C' designation indicates the specific ceramic Micro-X package configuration.
No public confirmed substitute part numbers are available in the official documentation.