BCP030C

BCP030C

$15.53
  • Description:RF MOSFET PHEMT FET 8V DIE
  • Series:-

SKU:d41147f254e4 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET PHEMT FET 8V DIE
  • Series:-
  • Mfr:BeRex Inc
  • Package:Tray
  • Technology:pHEMT FET
  • Frequency:6GHz ~ 18GHz
  • Gain:13.5dB
  • Voltage - Test:8 V
  • Current Rating (Amps):120mA
  • Noise Figure:1.1dB
  • Current - Test:45 mA
  • Power - Output:24.5dBm
  • Voltage - Rated:12 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:Die
  • Supplier Device Package:Die
  • Configuration:-

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BCP030C

Overview

The BeRex BCP030C is a GaAs Power pHEMT featuring a nominal 0.25-micron by 300-micron gate, designed for high-gain and medium power applications across the DC to 26.5 GHz frequency range. It supports both wideband (6-18 GHz) and narrow-band uses. Key electrical characteristics at 12 GHz include a typical P1dB output power of 24.5 dBm, gain of 13.5 dB, and PAE of 60%. At 18 GHz, it delivers 24.5 dBm output power with 10.5 dB gain and 55% PAE. The device operates with a maximum drain-source voltage of 12 V and includes SI3N4 passivation for reliability.

Feature Summary

  • Utilizes state-of-the-art metallization with SI3N4 passivation for enhanced reliability
  • Features a recessed gate structure optimized for high efficiency
  • Screened to ensure long-term stability in demanding environments

Applications

  • Commercial RF systems
  • Military and Hi-Rel applications
  • Test & Measurement equipment

Procurement Notes

Verify component authenticity through authorized BeRex channels or certified distributors. Confirm datasheet revision matches current specifications. Ensure handling protocols strictly follow ESD precautions due to GaAs sensitivity. Validate die attach methods against recommended Au-Sn eutectic processes. Review life support policy restrictions before integration into critical systems.

Selection Notes

Select this component when high gain and medium power are required up to 26.5 GHz. Consider the 0.25x300 micron gate size for specific power density needs. Evaluate thermal resistance requirements given the 115 °C/W rating. Ensure bias conditions align with the specified Vds and Id limits for optimal performance.

Part Context

This part belongs to the BCP series of High Efficiency Heterojunction Power FETs from BeRex. It shares architectural similarities with other devices in the lineup but is distinct in its specific gate dimensions and frequency response profile tailored for broadband and narrowband RF amplification tasks.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult BeRex directly for qualified alternatives or cross-reference options based on specific electrical and mechanical constraints.

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$15.53
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