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The BeRex BCP030C is a GaAs Power pHEMT featuring a nominal 0.25-micron by 300-micron gate, designed for high-gain and medium power applications across the DC to 26.5 GHz frequency range. It supports both wideband (6-18 GHz) and narrow-band uses. Key electrical characteristics at 12 GHz include a typical P1dB output power of 24.5 dBm, gain of 13.5 dB, and PAE of 60%. At 18 GHz, it delivers 24.5 dBm output power with 10.5 dB gain and 55% PAE. The device operates with a maximum drain-source voltage of 12 V and includes SI3N4 passivation for reliability.
Verify component authenticity through authorized BeRex channels or certified distributors. Confirm datasheet revision matches current specifications. Ensure handling protocols strictly follow ESD precautions due to GaAs sensitivity. Validate die attach methods against recommended Au-Sn eutectic processes. Review life support policy restrictions before integration into critical systems.
Select this component when high gain and medium power are required up to 26.5 GHz. Consider the 0.25x300 micron gate size for specific power density needs. Evaluate thermal resistance requirements given the 115 °C/W rating. Ensure bias conditions align with the specified Vds and Id limits for optimal performance.
This part belongs to the BCP series of High Efficiency Heterojunction Power FETs from BeRex. It shares architectural similarities with other devices in the lineup but is distinct in its specific gate dimensions and frequency response profile tailored for broadband and narrowband RF amplification tasks.
Publicly confirmed substitute part numbers are not available in the provided documentation. Engineers should consult BeRex directly for qualified alternatives or cross-reference options based on specific electrical and mechanical constraints.