BCP49E6327HTSA1

Description：TRANS NPN DARL 60V 0.5A SOT223-4
Series：-

SKU:a5d1cdccdb2b Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS NPN DARL 60V 0.5A SOT223-4
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：500 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：1V @ 100µA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：10000 @ 100mA, 5V
Power - Max：1.5 W
Frequency - Transition：200MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Supplier Device Package：PG-SOT223-4
Grade：-
Qualification：-

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BCP49E6327HTSA1

Overview

The BCP49E6327HTSA1 is an NPN silicon Darlington transistor manufactured by Infineon Technologies, housed in a SOT-223 surface-mount package. It features a maximum collector-emitter voltage of 60 V and a continuous collector current of 500 mA. The device supports a power dissipation of 250 mW with a junction temperature rating up to 150°C. Designed for general-purpose audio-frequency switching applications, it offers high current gain suitable for low-level signal amplification and driver circuits within consumer electronics and industrial control systems.

Feature Summary

NPN silicon Darlington configuration providing high current gain
SOT-223 surface-mount package for compact PCB integration
Rated for 60 V collector-emitter voltage and 500 mA continuous current
Optimized for general-purpose audio-frequency switching applications

Applications

General-purpose audio-frequency switching
Low-level signal amplification circuits
Driver stages in consumer electronics
Industrial control system interfaces

Procurement Notes

Verify the component authenticity against Infineon's official documentation before integration. Confirm that the SOT-223 package dimensions match the target PCB footprint requirements. Ensure thermal management strategies account for the specified 250 mW power dissipation limit under operating conditions. Check for RoHS compliance status if environmental regulations apply to the final assembly.

Selection Notes

Select this component when a high-gain NPN switching solution is required in a SOT-223 form factor. It is suitable for applications demanding 60 V blocking capability and 500 mA load handling. Consider thermal constraints due to the 250 mW dissipation rating. Compare against single-transistor alternatives if lower saturation voltage or higher frequency response is needed beyond audio frequencies.

Part Context

This part belongs to Infineon's discrete semiconductor portfolio, specifically within the bipolar junction transistor category. The E6327 suffix typically denotes specific tape-and-reel packaging configurations used for automated surface-mount assembly processes. It represents a standard general-purpose device rather than a specialized RF or high-power variant.