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The BCP51-10-QF is a PNP medium power transistor from the Nexperia BCP51-Q series, housed in a SOT223 (SC-73) surface-mounted plastic package. It features a collector-emitter voltage of -45 V and a continuous collector current of -1 A. The device supports a peak collector current of -2 A for single pulses up to 1 ms. DC current gain (hFE) ranges from 63 to 160 at VCE = -2 V and IC = -150 mA. Total power dissipation reaches 1.35 W on an FR4 PCB with a 6 cm² collector pad. Junction temperature maximum is 150 °C.
Verify the specific suffix against the official Nexperia ordering information table to confirm the exact hFE binning grade. Ensure the procurement documentation references the SOT223 package type and confirms AEC-Q101 qualification status for automotive compliance. Cross-check the marking code 'BCP51/10' to validate the component identity upon receipt.
Select this component when designing circuits requiring a PNP medium power transistor with verified automotive reliability. The BCP51-10-Q variant offers a specific gain range suitable for precise biasing requirements. Consider the SOT223 package dimensions and thermal resistance values when planning the PCB layout for adequate heat dissipation under load conditions.
This part belongs to the BCP51-Q series of PNP transistors designed for robust performance in demanding environments. The series includes variants with different gain bins to accommodate various circuit sensitivities. All members share the same SOT223 footprint and electrical limits, differing primarily in their DC current gain specifications as defined in the quick reference data.
Direct substitutes include other BCP51-Q series parts such as BCP51-Q or BCP51-16-Q, provided the specific hFE binning requirements are met. Verify that any replacement maintains the SOT223 package outline and AEC-Q101 qualification if automotive usage is required.