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The BCP5116TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-223 surface-mount package. It features a collector-emitter breakdown voltage of -45V and supports a continuous collector current of -1A with a peak pulse current of -2A. The device offers a power dissipation capability of 2W and includes two gain groups (10 and 16). It is qualified to AEC-Q101 standards for high reliability and is fully RoHS compliant.
Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm reel size and quantity specifications. Ensure compliance requirements match project needs, as the component is AEC-Q101 qualified and RoHS compliant. Cross-reference datasheet DS35366 Rev. 6-2 for accurate mechanical and electrical parameters before finalizing procurement orders.
Select this component for designs requiring a PNP medium power transistor in an SOT-223 package. Consider the -45V breakdown voltage and -1A current rating relative to circuit demands. Evaluate the available gain groups (10 and 16) to ensure compatibility with required amplification factors. Verify thermal management strategies given the 2W power dissipation limit under steady-state conditions.
This part belongs to the BCP51/52/53 series of PNP medium power transistors from Diodes Incorporated. The series provides complementary NPN types (BCP54, 55, 56) and varies primarily by breakdown voltage ratings (-45V, -60V, -80V). The BCP51 variant specifically targets -45V applications within this family.
Complementary NPN types include BCP54, BCP55, and BCP56. Other variants in the series are BCP52 and BCP53, which offer different voltage ratings. Verify pinout and package compatibility when substituting with components from other manufacturers.
The maximum collector-emitter breakdown voltage (BVCEO) is -45V.
Yes, it is qualified to AEC-Q101 standards for high reliability.
The device is available in gain groups 10 and 16.