BCP53-10E6327

Overview

The BCP53-10E6327 is an NPN silicon single bipolar junction transistor (BJT) from Infineon Technologies, designed for general-purpose audio frequency applications. It features a collector-emitter voltage rating of 80 V and supports a continuous collector current of 1 A. The device is housed in the PG-SOT223-4 surface-mount package, which provides a power dissipation capacity of 2 W. Key electrical characteristics include a transition frequency of 125 MHz and a minimum DC current gain of 100.

Feature Summary

• NPN Silicon AF Transistor
• PG-SOT223-4 Surface Mount Package
• High Power Dissipation Capability

Applications

• General-purpose switching
• Audio amplification circuits
• Driver stages

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the specific suffix E6327 matches the required PG-SOT223-4 packaging format. Ensure the part number corresponds to the active lifecycle status rather than obsolete variants within the BCX/BCP family.

Selection Notes

Select this component when an NPN transistor with 80 V breakdown and 1 A current handling is required in a compact SMD form factor. The PG-SOT223-4 package offers superior thermal performance compared to smaller packages like SOT-23, making it suitable for higher power dissipation needs up to 2 W.

Part Context

This part belongs to the BCX53/BCP53 series of high-current, low-voltage NPN transistors. It shares similar electrical specifications with the BCX53 but utilizes a different package optimized for higher power handling. The '10' designation typically indicates the hFE binning class.

Replacement Considerations

• BCX53-E6327