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Product Detailed Parameters
- Description：TRANS PNP 80V 1A SOT-223
- Series：BCP53T-Q
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：600 mW
- Frequency - Transition：140MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia BCP53-10T-Q is a PNP medium power transistor in an SOT223 (SC-73) package. It features a collector-emitter voltage of -80 V and a continuous collector current of -1 A, with a peak pulse current of -2 A. The DC current gain (hFE) ranges from 63 to 160 at VCE = -2 V and IC = -150 mA. Total power dissipation reaches 1.3 W on a standard FR4 PCB. Qualified under AEC-Q101, it supports junction temperatures up to 150 °C.
Feature Summary
- Qualified according to AEC-Q101 for automotive applications
- High collector current capability for both continuous and pulsed operation
- Three distinct current gain selections available within the series
- High power dissipation capability suitable for demanding thermal environments
Applications
- Linear voltage regulators
- MOSFET drivers
- High-side switches
- Power management circuits
- Amplifiers
Procurement Notes
Verify the specific ordering suffix matches the required gain bin (-10T-Q indicates hFE 63-160). Confirm the package type is SOT223 with four leads. Ensure the application meets AEC-Q101 qualification requirements if used in automotive contexts. Check the latest datasheet revision for any updates to absolute maximum ratings or thermal characteristics before finalizing the design.
Selection Notes
Select this component when a PNP transistor with -80 V rating and -1 A current capacity is needed. The -10T-Q variant provides a guaranteed hFE range of 63 to 160, distinguishing it from other gain bins in the BCP53T-Q family. Consider the SOT223 package for its thermal performance compared to smaller surface-mount options. Verify that the required switching speed and saturation voltage meet the specific circuit demands.
Part Context
This device belongs to the BCP53T-Q series, which includes complementary NPN transistors like the BCP56T-Q. The series offers three current gain variants: T-Q, -10T-Q, and -16T-Q. All share the same SOT223 package and electrical limits but differ in hFE specifications. This specific part is designed for robust performance in industrial and automotive electronics requiring reliable medium-power switching.
Replacement Considerations
BCP56-10T-Q is the NPN complement within the same qualified series. Other BCP53T-Q variants (-16T-Q, T-Q) are pin-compatible but offer different current gain ranges. Cross-reference with generic SOT223 PNP transistors only if AEC-Q101 qualification is not required.
FAQ
What is the DC current gain range for the BCP53-10T-Q?
The DC current gain (hFE) ranges from 63 to 160 when measured at VCE = -2 V and IC = -150 mA.
Is this transistor qualified for automotive use?
Yes, the BCP53T-Q series is qualified according to the AEC-Q101 standard and is recommended for automotive applications.
What is the maximum peak collector current?
The maximum peak collector current (ICM) is -2 A for a single pulse with a duration of tp ≤ 1 ms.
