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Product Detailed Parameters
- Description：TRANS PNP 80V 1A SOT-223
- Series：BCP53T-Q
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：600 mW
- Frequency - Transition：140MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The Nexperia BCP53-10T-Q is a PNP medium power transistor in an SOT223 (SC-73) package. It features a collector-emitter voltage of -80 V and a continuous collector current of -1 A. The device has a peak collector current capability of -2 A for single pulses up to 1 ms. DC current gain ranges from 63 to 160 at VCE = -2 V and IC = -150 mA. Total power dissipation reaches 1.3 W on a standard FR4 PCB with a 1 cm² collector pad. Junction temperature maximum is 150 °C.
Feature Summary
- Qualified according to AEC-Q101 for automotive applications
- High collector current capability for both continuous and pulsed operation
- Three distinct current gain selections available within the series
- High power dissipation capability suitable for medium power switching
Applications
- Linear voltage regulators
- MOSFET drivers
- High-side switches
- Power management circuits
- Amplifiers
Procurement Notes
Verify that the specific ordering suffix matches the required current gain bin, as the datasheet defines three variants within the BCP53T-Q family. Confirm the package type is SOT223 and ensure the application environment meets the AEC-Q101 qualification standards intended by the manufacturer. Check the most recent product data sheet for any updates to marking codes or thermal characteristics before finalizing design integration.
Selection Notes
Select this component when an automotive-grade PNP transistor with high current handling is required. The BCP53-10T-Q offers a specific gain range of 63 to 160, distinguishing it from other gain bins in the series. Ensure the thermal design accounts for the specified power dissipation limits based on the PCB copper area and layer configuration used in the target application.
Part Context
This part belongs to the BCP53T-Q series of PNP medium power transistors manufactured by Nexperia. It serves as the PNP complement to the NPN BCP56T-Q series. The device utilizes a plastic surface-mounted package designed for increased heatsink performance compared to standard variants. It is specifically engineered for robustness in demanding electronic environments.
Replacement Considerations
BCP53-10T
FAQ
What is the marking code for the BCP53-10T-Q?
The marking code for the BCP53-10T-Q is P5310T.
Is the BCP53-10T-Q qualified for automotive use?
Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.
What is the peak collector current capability?
The peak collector current is -2 A for a single pulse duration of tp ≤ 1 ms.
