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Product Detailed Parameters
- Description：TRANS PNP 80V 1.5A SOT223
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：1.5 A
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：63 @ 150mA, 2V
- Power - Max：1.5 W
- Frequency - Transition：50MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223 (TO-261)
- Grade：-
- Qualification：-
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Overview
The onsemi BCP53-10T1 is a PNP bipolar junction transistor housed in an SOT-223 surface-mount package. It features a maximum collector-emitter voltage of -80 V and a maximum collector-base voltage of -100 V. The device supports a continuous DC collector current of -1.5 A with a power dissipation rating of 1.5 W. Key electrical characteristics include a minimum DC current gain (hFE) of 40, a transition frequency of 35 MHz, and a maximum emitter-base voltage of 5 V. Operating temperatures range from -65°C to +150°C.
Feature Summary
- Designed for general-purpose amplifier applications within medium power requirements.
- Utilizes a robust SOT-223 package that absorbs thermal stress during soldering to protect the die.
- Compliant with automotive reliability standards for use in demanding environments.
Applications
- General-purpose amplification circuits
- Industrial control systems
- Power management modules
Procurement Notes
Verify the specific suffix against official datasheets to confirm exact hFE binning and packaging configuration. Confirm RoHS compliance status and ensure the ordering code matches the required tape-and-reel quantity. Cross-reference the manufacturer's latest documentation for any recent design or labeling changes.
Selection Notes
Select this component when a PNP transistor with 80V breakdown and 1.5A current capability is required in a compact surface-mount form factor. Ensure the application operates within the specified thermal limits and that the hFE range meets the circuit's drive requirements. Verify compatibility with standard SOT-223 footprints.
Part Context
This part belongs to the BCP53 series of PNP medium power transistors. It serves as the PNP counterpart to the NPN BCP56 series. The family is designed for versatile use in low-to-medium power switching and linear applications, offering a balance of performance and thermal stability in a standardized surface-mount enclosure.
Replacement Considerations
The NPN complement is the BCP56T1G. Other manufacturers produce equivalent parts under the BCP53 designation, such as Nexperia BCP53-10TF or Diodes BCP53-10TA. Verify pinout and electrical tolerances before substitution.
FAQ
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is -80 V.
Is this transistor suitable for automotive applications?
Yes, the component is qualified to the AEC-Q101 standard.
What is the minimum DC current gain specified?
The minimum DC current gain (hFE) is 40.
