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The BCP53-16 is a PNP silicon epitaxial planar transistor manufactured by STMicroelectronics, designed for surface mounting in SOT-223 plastic packages. It features a maximum collector-emitter voltage of 80 V and a continuous collector current of 1 A. The device offers a power dissipation rating of 1.5 W and a transition frequency of 100 MHz. DC current gain (hFE) is specified with a minimum value of 100 at 150 mA and 2 V. Collector-base leakage current is limited to 100 nA, while the collector-emitter saturation voltage is 500 mV at 50 mA base and 500 mA collector currents.
Verify manufacturer identification on the component marking to confirm STMicroelectronics origin, as other manufacturers produce identical part numbers. Ensure the specific suffix matches the required tape and reel or cut tape packaging format. Confirm RoHS compliance status and moisture sensitivity level requirements against the project specifications before finalizing procurement orders.
Select this component when a PNP transistor with 80 V breakdown and 1 A current capability is required in an SOT-223 footprint. Consider the complementary BCP56-16 for NPN requirements in matched pairs. Evaluate thermal management needs given the 1.5 W power dissipation limit in the specified package. Verify that the 100 MHz transition frequency meets the signal processing speed requirements of the target circuit design.
The BCP53 series belongs to a family of medium power bipolar junction transistors produced by STMicroelectronics. These devices are engineered for robust performance in general-purpose electronic applications. The SOT-223 package provides efficient heat dissipation relative to smaller surface-mount options, supporting higher power handling capabilities compared to standard small-signal transistors.
BCP53-16-TP by Micro Commercial Components is documented as a parameter equivalent substitute.