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The BCP53 is a PNP silicon epitaxial transistor designed for medium power surface mount applications. It features a maximum collector current of 1.5 A and a collector-emitter voltage rating of -80 Vdc. The device is housed in an SOT-223 package with a total power dissipation of 1.5 W at 25°C. DC current gain ranges from 25 to 250 depending on the specific variant and operating conditions, while the current-gain bandwidth product is typically 50 MHz.
Verify the specific ordering suffix (e.g., T1, T1G) to confirm tape and reel quantity and lead-free status. Confirm the exact hFE binning requirement, as the base model differs from the -10 and -16 variants. Ensure the application supports the specified collector-emitter voltage polarity and current limits.
Select this component for designs requiring high current handling in a compact surface mount footprint. Consider the complementary NPN BCP56 for push-pull configurations. Evaluate thermal management requirements based on the junction-to-ambient resistance and derating characteristics above 25°C.
This component belongs to the BCP53 series of PNP silicon epitaxial transistors manufactured by onsemi. The series includes variants such as BCP53-10 and BCP53-16, which offer different minimum DC current gain thresholds. The standard BCP53 serves as the baseline model within this family.
The datasheet identifies the BCP56 as the NPN complementary type. Verify pinout compatibility and electrical ratings against other SOT-223 PNP transistors before substitution.
The maximum continuous collector current is 1.5 A.
The standard BCP53 has a minimum hFE of 25 at 50 mA. The BCP53-10 requires a minimum of 40 at 150 mA, and the BCP53-16 requires a minimum of 63 at 150 mA.
Yes, the SOT-223 package is designed to be soldered using wave or reflow methods, with formed leads that absorb thermal stress.