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The BCP53QTA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-223 package. It supports a continuous collector current of -1 A and a peak pulse current of -2 A. The device features a collector-emitter breakdown voltage (BVCEO) of -80 V and a collector-base breakdown voltage (BVCBO) of -100 V. Power dissipation reaches 2 W at +25°C ambient temperature. Transition frequency is specified at 150 MHz. Operating temperature ranges from -65°C to +150°C.
Verify that the specific ordering suffix matches the required gain group and packaging configuration. Confirm that the component meets the necessary AEC-Q101 qualification requirements if intended for automotive use. Ensure the datasheet revision aligns with the design specifications before finalizing procurement orders.
Select this component when a PNP transistor with -80 V collector-emitter voltage and -1 A continuous current capability is required. Consider the SOT-223 package for thermal management needs up to 2 W. Verify compatibility with complementary NPN devices if push-pull configurations are utilized in the circuit design.
This part belongs to the BCP51/52/53 family of PNP medium power transistors. The QTA suffix indicates it is an automotive-grade variant qualified to AEC-Q101 standards. It shares electrical characteristics with standard commercial versions but includes additional quality assurance documentation.
BCP53TA
Yes, the BCP53QTA is qualified to AEC-Q101 standards and is capable of PPAP submission.
The maximum power dissipation is 2 W at an ambient temperature of +25°C.