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The BCP5410TA is an NPN medium power transistor manufactured by Diodes Incorporated, housed in a SOT-223 surface-mount package. It features a collector-emitter breakdown voltage of 45V and supports a continuous collector current of 1A with a peak pulse current of 2A. The device offers a maximum power dissipation of 2W and operates within a temperature range of -55°C to +150°C. As part of the '10' gain group, it provides a DC current gain (hFE) ranging from 63 to 160 at 150mA. Electrical characteristics include a low saturation voltage of less than 500mV at 0.5A and a transition frequency of 150MHz.
Verify the component marking code on the physical device matches the datasheet specification exactly. Confirm that the ordering suffix TA corresponds to the required reel size and tape width for your automated assembly equipment. Ensure the selected gain group aligns with circuit design requirements before finalizing procurement orders.
Select this component when a medium power NPN transistor with a 45V rating is required. The '10' designation indicates a specific DC current gain range suitable for precise amplification tasks. Consider the complementary PNP types if a push-pull configuration is needed for the application design.
This component belongs to the BCP54/55/56 family of NPN medium power transistors designed for general-purpose use. It shares mechanical dimensions and thermal characteristics with other variants in the series, differing primarily in breakdown voltage ratings and gain groupings. The family includes complementary PNP types for complete signal processing solutions.
BCP54TA
The '10' suffix identifies the specific DC current gain group, which ranges from 63 to 160 at a collector current of 150mA.
Standard versions are not automatically qualified for automotive use. Contact Diodes Incorporated or local representatives for parts qualified to AEC-Q100/101/200 standards.
The maximum operating junction temperature is +150°C.