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The BCP5416H6327XTSA1 is an NPN silicon audio frequency transistor from Infineon Technologies, housed in a SOT-223 package. It features a collector-emitter voltage of 45 V and a continuous collector current of 1 A. The device exhibits a low collector-emitter saturation voltage of 0.5 V at 500 mA. It includes a DC current gain ranging from 100 to 250 and a transition frequency of 100 MHz. Qualified under AEC-Q101 standards, it supports a maximum power dissipation of 2 W and operates within a junction temperature range up to 150 °C.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if used in automotive applications. Cross-reference the datasheet revision date to confirm electrical characteristics match the production batch. Confirm RoHS compliance status through manufacturer declarations.
Select this component when an NPN transistor with 1 A continuous current and 45 V breakdown voltage is required. Consider the SOT-223 package for surface-mount assembly constraints. Evaluate the hFE range of 100 to 250 for gain requirements in audio applications. Compare thermal resistance values against system heat dissipation capabilities.
This part belongs to the BCP54...BCP56 family of NPN silicon AF transistors. It is complemented by PNP types BCP51...BCP53. The series is designed for audio applications requiring high current handling and low saturation voltages. All variants share similar pin configurations and package styles.
Direct substitutes include other NPN transistors with matching 1 A current rating and 45 V VCEO. Verify pin compatibility with SOT-223 packages. Check for equivalent hFE ranges and saturation voltages. Consult Infineon for recommended cross-reference parts if exact matches are unavailable.
The maximum collector-emitter voltage (VCEO) for the BCP54 variant is 45 V.
Yes, the component is qualified according to AEC-Q101 standards.
The transition frequency (fT) is typically 100 MHz at IC = 50 mA and VCE = 10 V.