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The BCP54E6327HTSA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and features an AEC-Q100 qualification for automotive reliability. The device supports a maximum collector current of 1A and a collector-emitter voltage of 45V, with a power dissipation rating of 330mW. Operating characteristics include a DC current gain (Hfe) of at least 100 at specific test conditions and a transition frequency of 100MHz. The component functions within a temperature range from -55°C to +150°C.
Verify the exact ordering suffix against official Infineon documentation to ensure correct binning and tape-and-reel specifications. Confirm that the AEC-Q100 qualification status aligns with your specific automotive application requirements. Check for any recent product lifecycle notifications regarding availability or obsolescence before finalizing procurement plans.
Select this component when a robust NPN transistor with high current handling and automotive certification is required. Ensure the circuit design accommodates the 330mW power dissipation limit and the thermal constraints of the SOT-23-3 package. Compare Hfe variations across operating temperatures to guarantee stable performance in the target environment.
This part belongs to the BCP54 series of general-purpose NPN transistors designed for versatile electronic applications. The E6327HTSA1 suffix indicates specific manufacturing and packaging details defined by Infineon. It serves as a discrete semiconductor solution within broader Infineon portfolios for consumer and industrial electronics.
Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may lack the specific AEC-Q100 automotive qualification or identical pinout compatibility.