BCP55-16

Overview

The BCP55-16 is a PNP silicon epitaxial planar transistor manufactured by Shenzhen Slkormicro Semicon Co., Ltd. It features a collector-emitter breakdown voltage (Vceo) of 60V and a continuous collector current (Ic) of 1A. The device has a maximum power dissipation rating of 1.5W at 25°C ambient temperature. Its DC current gain (hFE) ranges from 100 to 250, ensuring reliable amplification performance in standard electronic circuits.

Feature Summary

• Designed for audio frequency driver and output stages
• Provides high collector current capability
• Features low collector-emitter saturation voltage

Applications

• Audio frequency driver stages
• Audio frequency output stages
• General-purpose switching applications

Procurement Notes

Verify the specific suffix '16' against the manufacturer's official datasheet to confirm binning or gain classification requirements. Ensure the component matches the SOT-223 package outline and pin configuration (Base, Collector, Emitter) specified in the documentation before integration into the design.

Selection Notes

Select this PNP transistor when complementary operation with NPN types like the BCP56 is required within the same family. Consider the 60V Vceo limit for circuit voltage headroom and the 1.5W thermal dissipation capacity for heat management strategies in the final assembly.

Part Context

This component belongs to the BCP54/BCP55 series of NPN/PNP complementary transistors. These devices are engineered for general-purpose amplification and switching tasks. The series offers matched electrical characteristics between the NPN and PNP variants to facilitate balanced circuit designs in consumer electronics and industrial equipment.

Replacement Considerations

Official complementary substitutes include the BCP51 and BCP53 PNP types mentioned in the feature documentation. Verify pinout compatibility and electrical ratings against the original design specifications before substitution.