BCP5516H6327XTSA1

Overview

The BCP5516H6327XTSA1 is an NPN silicon audio frequency transistor from the BCP54-BCP56 series, manufactured by Infineon Technologies. It features a collector-emitter voltage (VCEO) of 60 V and a collector-base voltage (VCBO) of 100 V. The device supports a maximum continuous collector current of 1 A with a peak current capability of 1.5 A for pulses up to 10 ms. Total power dissipation reaches 2 W at a case temperature of 120°C or lower. The transition frequency (fT) is typically 100 MHz. It operates within a junction temperature range of -65°C to +150°C and is qualified according to AEC-Q101 standards.

Feature Summary

• Designed specifically for audio frequency driver and output stages
• Features low collector-emitter saturation voltage for efficient switching
• High collector current handling capability suitable for power applications
• Qualified for automotive electronics under AEC-Q101 standards

Applications

• Audio frequency driver stages
• Audio frequency output stages
• Automotive electronic circuits requiring AEC-Q101 qualification

Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix H6327XTSA1 matches required packaging and marking specifications. Check current lifecycle status as manufacturing schedules may change. Ensure compliance with RoHS directives if applicable to your assembly process. Validate thermal management requirements against the specified junction-to-soldering point thermal resistance.

Selection Notes

Select this component when a 60 V NPN transistor with 1 A continuous current rating is required for audio applications. Compare against BCP54 variants for lower voltage needs or BCP56 for higher voltage tolerance. Consider the SOT223 package constraints for thermal dissipation in your PCB layout. Verify that the hFE gain range meets your circuit's amplification requirements at the intended operating current.

Part Context

This part belongs to the BCP54...-BCP56... family of NPN silicon AF transistors. It shares the same SOT223 package and pin configuration as other members like BCP54 and BCP56. The '16' designation indicates specific DC current gain binning. Complementary PNP types are available in the BCP51...BCP53 series for push-pull configurations.

Replacement Considerations

Direct substitutes include other BCP55 variants with matching electrical characteristics. Cross-reference with BCP55-16 for identical gain binning. Ensure any replacement maintains the SOT223 footprint and AEC-Q101 qualification if used in automotive contexts.