BCP55TA

$0.37

Description：TRANS NPN 60V 1A SOT-223-3
Series：-

SKU:2709d7ceea70 Category: Single Bipolar Transistors Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 60V 1A SOT-223-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：40 @ 150mA, 2V
Power - Max：2 W
Frequency - Transition：150MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-261-4, TO-261AA
Supplier Device Package：SOT-223-3
Grade：-
Qualification：-

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BCP55TA

Overview

The BCP55TA is an NPN silicon planar medium power transistor manufactured by Diodes Incorporated. It features a single configuration housed in a surface-mount SOT-223-4 package. Key electrical specifications include a maximum collector current of 1 A, a collector-emitter voltage (VCEO) of 60 V, and a collector-base voltage (VCBO) of 60 V. The device has a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 150 MHz. Power dissipation is rated at 2 W, with an operating temperature range from -55°C to +150°C.

Feature Summary

Utilizes silicon planar technology for robust performance in medium power applications.
Designed for surface mount installation within a compact SOT-223-4 footprint.
Provides high current handling capability suitable for amplifier and switching circuits.

Applications

General purpose amplifier circuits
Switching applications requiring medium power handling
Power management designs utilizing NPN configurations

Procurement Notes

Verify the specific suffix TA against official Diodes Incorporated documentation to confirm reel packaging and tape specifications. Ensure compatibility with SOT-223-4 footprints during PCB layout. Cross-reference datasheet parameters such as thermal resistance and saturation voltage with system requirements before finalizing procurement decisions.

Selection Notes

Select this component when an NPN transistor with 1 A continuous collector current and 60 V breakdown voltage is required. The SOT-223-4 package offers higher power dissipation than smaller SMD packages. Verify that the 150 MHz transition frequency meets the signal bandwidth needs of the intended application circuit design.

Part Context

This part belongs to the BCP55 series of NPN silicon planar transistors produced by Diodes Incorporated. The series is characterized by medium power capabilities and is widely used in general electronic equipment. The TA suffix typically denotes specific packaging variations, such as tape and reel quantities, distinct from bulk or cut tape options.