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The BCP56-10 is an NPN medium power bipolar junction transistor manufactured by Diotec Semiconductor. It features a maximum collector-emitter voltage of 80 V and a continuous collector current of 1 A. The device operates within a temperature range of -55°C to +150°C and has a power dissipation rating of 2 W. It utilizes the SOT-223 surface-mount package.
Verify the specific suffix designation against official Diotec documentation to confirm the exact gain binning or tolerance class associated with the '10' identifier. Ensure the procurement specification matches the required SOT-223 package variant and that the component meets applicable RoHS and REACH compliance standards for the intended manufacturing environment.
Select this component when a robust NPN transistor with 1 A current handling and 80 V breakdown is required in a compact SOT-223 footprint. Consider the complementary BCP53 for PNP requirements. Evaluate thermal management needs given the 2 W dissipation rating and ensure the operating temperature range aligns with system constraints.
This part belongs to the BCP54/55/56 family of general-purpose NPN transistors designed for medium power applications. The series offers complementary PNP options (BCP51/52/53) and is characterized by low saturation voltages and high current capabilities, making it suitable for commercial and industrial-grade electronic designs requiring reliable signal processing or switching performance.
Public confirmed substitute part numbers are not provided in the verified source material.