SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia BCP56-10,135 is an NPN medium power transistor housed in a SOT223 (SC-73) surface-mounted package. It supports a collector-emitter voltage of 80 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device offers a DC current gain (hFE) range of 63 to 160 at VCE = 2 V and IC = 150 mA. Total power dissipation reaches 1.35 W on a standard FR4 PCB footprint. Transition frequency is typically 180 MHz.
Verify that the specific ordering suffix matches the required gain binning and packaging format. Confirm the component status against the latest datasheet revision history, as product qualifications may change over time. Ensure design compliance with absolute maximum ratings to prevent permanent damage during operation.
Select this variant when a specific hFE range between 63 and 160 is required at 150 mA. Compare total power dissipation requirements against the thermal resistance values provided for different PCB mounting pad sizes. Verify that the SOT223 package dimensions fit the intended layout constraints.
This component belongs to the BCP56 series of NPN medium power transistors manufactured by Nexperia. The series includes variants with different gain ranges, such as the BCP56-16. All parts share the same SOT223 physical package and general electrical characteristics, differing primarily in their DC current gain specifications.
BCP56-16T serves as a direct functional substitute within the same series, offering a higher minimum DC current gain of 100 compared to the BCP56-10's 63. Both utilize the SOT223 package and share identical voltage and current ratings.