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The Nexperia BCP56-10T-Q is an NPN medium power transistor in the BCP56T-Q series, housed in a SOT223 (SC-73) surface-mount package. It supports a collector-emitter voltage of 80 V and continuous collector current of 1 A, with peak current up to 2 A. The device features a DC current gain (hFE) range of 63 to 160 at VCE=2V and IC=150mA. Qualified under AEC-Q101 for automotive use, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix matches the required gain bin. Confirm that the component meets AEC-Q101 standards if intended for automotive deployment. Ensure thermal design accounts for the specified power dissipation limits on the target PCB footprint. Cross-reference the datasheet revision date against manufacturing lot dates to ensure specification consistency.
Select this variant when a specific mid-range current gain is required, as indicated by the '-10' designation. Compare total power dissipation capabilities against the expected ambient temperature and PCB copper area. Verify compatibility with the complementary PNP device BCP53-10T-Q for push-pull configurations. Assess switching speed requirements against the transition frequency specifications.
This component belongs to the BCP56T-Q series of NPN transistors manufactured by Nexperia. It shares the same physical SOT223 package and electrical ratings as other variants in the series, differing primarily in the DC current gain classification. The series is designed for general-purpose medium power switching and amplification tasks.
BCP53-10T-Q is the PNP complement within the same qualified series.