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The BCP56-16 is a silicon epitaxial planar NPN medium voltage transistor manufactured by STMicroelectronics. It provides a continuous collector current of 1 A and a collector-emitter breakdown voltage of 80 V, with a collector-base voltage rating of 100 V. The device features a minimum DC current gain (hFE) of 100 at IC=150mA and VCE=2V. Total power dissipation reaches 1.6 W in the SOT-223 package. The component operates within a junction temperature range up to 150 °C and includes a low collector-emitter saturation voltage.
Verify the manufacturer marking on the component body to confirm STMicroelectronics origin, as multiple vendors produce this part number. Ensure the ordering suffix matches the required gain binning and packaging format. Confirm RoHS compliance status and ECOPACK lead-free specifications against the specific shipment documentation provided by the supplier.
Select this component when an NPN transistor requires 80 V collector-emitter voltage and 1 A continuous current capacity. The SOT-223 package is suitable for surface-mount applications requiring higher power dissipation than standard small-signal packages. Verify that the required hFE bin aligns with the -16 designation for optimal circuit performance in linear or switching modes.
This device belongs to the BCP54-BCP56 family of medium power transistors designed for general-purpose applications. The complementary PNP type is the BCP53-16. These components are engineered for use in audio drivers, power management circuits, and switching applications where moderate voltage and current ratings are necessary.
The BCP53-16 serves as the complementary PNP counterpart within the same family. Cross-manufacturer equivalents such as Nexperia BCP56-16T or ON Semiconductor BCP56-16T1G share identical electrical characteristics and pinout configurations.