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The BCP56-16-AU_R2_000A1 is an NPN low VCE(SAT) transistor manufactured by Panjit International Inc. It features a collector-emitter voltage (VCEO) of 100V and a continuous collector current (IC) of 1A. The device utilizes a SOT-223 package with a maximum power dissipation of 1.4W in steady state. Key electrical characteristics include a DC current gain (hFE) ranging from 100 to 250 at IC=150mA, and a low saturation voltage of 0.35V max at IC/IB=500mA/50mA. It operates within a junction temperature range of -55°C to +150°C.
Verify the component against the official datasheet revision 02 dated January 27, 2026. Confirm the marking code 8110DW matches the physical device. Ensure the lot number is recorded for tracking purposes as per manufacturer guidelines. Check for compliance with EU RoHS 2.0 standards and IEC61249 green molding compound requirements during acceptance testing.
Select this component when a high-current NPN transistor with low saturation voltage is required. It serves as the complementary pair to the BCP53-16-AU PNP transistor. Consider the thermal resistance of 90°C/W for steady-state operation when designing heat dissipation strategies. Verify that the 100V breakdown voltage meets the circuit's maximum operating requirements.
This part belongs to the BCP56 series of silicon NPN epitaxial transistors designed for general-purpose amplification and switching. It is housed in a lead-free SOT-223 package compliant with MIL-STD-750 solderability standards. The product line emphasizes low saturation voltage and high current handling capabilities for robust performance in various electronic designs.
The documented PNP complement is the BCP53-16-AU. No other direct substitute part numbers are confirmed in the provided documentation.