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The BCP56-16HX is an NPN medium power transistor from the Nexperia BCP56H series, housed in a SOT223 (SC-73) surface-mounted package. It supports a collector-emitter voltage of 80 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device offers three current gain selections; the -16H variant provides a DC current gain range of 100 to 250 at 150 mA. It features high power dissipation capabilities, reaching up to 1.6 W on a standard four-layer FR4 PCB, and operates reliably in high-temperature environments up to a junction temperature of 175 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact current gain bin and packaging configuration. Ensure that the thermal design accounts for the required power dissipation limits based on the specific PCB copper area and layer count used in the final assembly.
Select this component when a robust NPN transistor with high thermal stability and automotive qualification is required. The SOT223 package provides superior heat dissipation compared to smaller surface-mount alternatives. Consider the specific hFE bin (-16H) if precise gain control within the 100 to 250 range is necessary for the circuit design.
This part belongs to the BCP56H series, which includes complementary PNP transistors such as the BCP53H. The series is designed for general-purpose medium power switching and amplification tasks. The SOT223 package is specifically chosen for its ability to handle higher power loads while maintaining a compact footprint suitable for modern printed circuit board layouts.
BCP56H
The maximum junction temperature is 175 °C.
Yes, the BCP56H series is qualified in accordance with the AEC-Q101 standard.
The peak collector current is 2 A for a single pulse duration of 1 ms or less.