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Product Detailed Parameters
- Description：TRANS NPN 80V 1A SOT223
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：1.5 W
- Frequency - Transition：130MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223 (TO-261)
- Grade：-
- Qualification：-
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Overview
The BCP56-16T1G is an NPN silicon epitaxial transistor from the BCP56 series, housed in a surface-mount SOT-223 package. It features a collector-emitter voltage of 80 Vdc and a continuous collector current rating of 1 Adc. The device offers a DC current gain (hFE) range of 100 to 250 at IC = 500 mA and VCE = 2.0 V. It operates within a junction temperature range of -65°C to 150°C and includes a PNP complement, the BCP53T1G.
Feature Summary
- Designed for medium power surface mount applications with high current capability
- SOT-223 package constructed to absorb thermal stress during wave or reflow soldering
- Available in tape and reel packaging for automated assembly processes
Applications
- Audio amplifier circuits
- General purpose switching applications
- Medium power surface mount designs
Procurement Notes
Verify the specific suffix '16' indicates the hFE binning class required for your design. Confirm the ordering code matches the desired reel quantity, as T1G denotes 1000 units and T3G denotes 4000 units. Ensure compatibility with Pb-free and RoHS compliance requirements. Check for any discontinued status notices if sourcing older inventory batches.
Selection Notes
Select this component when a medium power NPN transistor with high current handling is needed in a surface-mount form factor. Consider the BCP53T1G if a complementary PNP device is also required for push-pull configurations. Evaluate the thermal resistance characteristics against your PCB copper area constraints to ensure adequate heat dissipation under load.
Part Context
This part belongs to the BCP56 series of NPN silicon epitaxial transistors manufactured by onsemi. The series is specifically engineered for audio amplifier applications. The BCP56-16T1G variant specifies a particular current gain binning level compared to other members like the BCP56-10. It shares the same physical package and general electrical limits as its series counterparts.
Replacement Considerations
The official PNP complement is the BCP53T1G. For direct substitution, verify that the replacement device matches the SOT-223 package dimensions and pinout configuration. Ensure the substitute meets the 80 V collector-emitter voltage and 1 A current ratings specified for this application.
