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Product Detailed Parameters
- Description：TRANS NPN 80V 1A SOT223
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：1.5 W
- Frequency - Transition：130MHz
- Operating Temperature：-65°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223 (TO-261)
- Grade：-
- Qualification：-
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Overview
The BCP56-16T3G is an NPN silicon epitaxial transistor from the BCP56 series, housed in a surface-mount SOT-223 package. It is designed for medium power applications with a collector-emitter voltage of 80 Vdc and continuous collector current of 1 Adc. The device features a DC current gain (hFE) range of 100 to 250 at IC = 150 mA and VCE = 2.0 V. It operates within a junction temperature range of -65°C to 150°C and includes thermal protection via formed leads that absorb soldering stress.
Feature Summary
- Designed for audio amplifier applications
- SOT-223 package absorbs thermal stress during wave or reflow soldering
- Available in tape and reel packaging for automated assembly
Applications
- Audio amplifier circuits
- Medium power surface mount applications
Procurement Notes
Verify the specific ordering suffix T3G corresponds to the 13-inch/4000-unit reel configuration as documented in the official onsemi datasheet. Confirm that the part marking BH-16 matches the BCP56-16 variant specifications. Ensure compliance with RoHS and Pb-free requirements if applicable to your manufacturing process. Check for any discontinued status notices regarding this specific revision before finalizing procurement plans.
Selection Notes
Select this component when a high-current NPN transistor with moderate voltage ratings is required for surface-mount designs. The BCP56-16 variant offers a specific hFE binning range suitable for consistent gain performance in linear amplification stages. Consider the SOT-223 package size for thermal management needs relative to the 1.5 W power dissipation capability at 25°C ambient temperature.
Part Context
This device belongs to the BCP56 series of NPN silicon epitaxial transistors manufactured by onsemi. The series includes complementary PNP devices like the BCP53T1G. The BCP56-16T3G specifically denotes the version with defined current gain characteristics packaged in a standard tape and reel format for high-volume production environments.
Replacement Considerations
The datasheet identifies the BCP53T1G as the PNP complement. No direct NPN substitutes are listed in the provided documentation. Verify pinout compatibility and electrical parameters against alternative components if sourcing from different manufacturers.
