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The BCP56-6 is an NPN medium power bipolar junction transistor manufactured by Diotec Semiconductor. It features a collector-emitter voltage (VCEO) of 60 V and a continuous collector current of 1 A. The device dissipates up to 2 W of power in an SOT-223-4 surface-mount package. Key electrical parameters include a minimum DC current gain (hFE) of 160 at 2 mA, a maximum gain bandwidth product (fT) of 125 MHz, and a collector-emitter saturation voltage of 700 mV at 1 A. It operates within a temperature range of -55 °C to +150 °C.
Verify the specific suffix designation against official Diotec Semiconductor datasheets to confirm the exact hFE binning and internal resistance values. Ensure the ordering part number matches the required package variant and compliance standards. Cross-reference manufacturer documentation for any recent revisions to electrical characteristics or mechanical dimensions before finalizing procurement specifications.
Select this component when a single NPN transistor with integrated biasing resistors is required for compact designs. The SOT-223-4 package offers superior thermal dissipation compared to smaller surface-mount options. Consider the 60 V rating and 1 A current capacity relative to load requirements. Verify that the integrated resistor values align with the target logic voltage levels and drive currents.
This component belongs to the BCP56 series of digital transistors produced by Diotec Semiconductor. These devices integrate an NPN transistor with built-in biasing resistors to simplify circuit design. The series is designed for general-purpose switching and amplification tasks where space efficiency and reduced component count are priorities. The BCP56-6 specifically denotes a particular gain classification within this family.
Public confirmed substitute part numbers: None identified.