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The BCP5610QTA is an NPN medium power Bipolar Junction Transistor (BJT) manufactured by Diodes Incorporated, designed for automotive applications. It features a collector-emitter voltage (VCEO) of 80 V and a continuous collector current (IC) of 1 A. The device supports a peak pulse collector current (ICM) of 2 A and offers a power dissipation (PD) of 2 W. Electrical characteristics include a transition frequency (fT) ranging from 100 to 150 MHz at IC = 50 mA. The transistor is housed in a SOT-223 surface-mount package with matte tin-plated leads.
Verify the specific ordering suffix matches the required packaging quantity. The 'TA' suffix indicates a reel size of 7 inches containing 1000 units per reel. Confirm that the component meets the necessary PPAP capability requirements for your specific automotive assembly line. Ensure the design accommodates the specified thermal resistance values under steady-state operating conditions.
Select this component when an NPN transistor with an 80 V collector-emitter breakdown voltage is required for automotive-grade designs. The device provides a 1 A continuous current rating suitable for medium power tasks. Consider the complementary PNP type BCP5316Q if a matched pair is needed. Verify that the SOT-223 package dimensions fit the available PCB real estate and thermal management strategy.
This part belongs to the BCP5610Q series of NPN medium power transistors. It is specifically engineered to meet stringent automotive application requirements. The product utilizes a molded plastic case material with a UL flammability rating of 94V-0. It is distinct from standard commercial grade transistors due to its AEC-Q101 qualification and associated reliability testing protocols.
The datasheet identifies the BCP5316Q as the complementary PNP type within the same family. No other direct substitute part numbers are explicitly listed in the provided documentation.