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The BCP5610TA is an NPN medium power transistor from the BCP series, manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of 80V and supports a continuous collector current of 1A with a peak pulse current of 2A. The device provides 2W of power dissipation in a SOT223 package. It belongs to gain group 10, offering a DC current gain range of 63 to 160 at 150mA. Key electrical characteristics include a low saturation voltage of less than 500mV at 0.5A and a transition frequency of 150MHz.
Verify the specific ordering suffix TA to confirm tape and reel packaging details. Ensure compliance requirements match project specifications, as the component is fully RoHS compliant and halogen-free. Confirm that the application environment does not require automotive-specific qualification beyond standard industrial ratings.
Select this component when an NPN transistor with 80V collector-emitter voltage and 1A continuous current rating is required. The BCP5610TA is suitable for designs needing gain group 10 characteristics. Consider complementary PNP types like the BCP53 for push-pull configurations. Evaluate thermal management needs based on the 2W power dissipation limit in the SOT223 case.
The BCP5610TA belongs to the BCP 54/55/56 family of NPN medium power transistors. This series includes variants with different breakdown voltages (45V, 60V, 80V) and gain groups. The BCP56 variant specifically offers the highest voltage rating within the standard lineup. Complementary PNP transistors are available in the BCP51, BCP52, and BCP53 series.
Direct substitutes within the same family include BCP56TA (standard gain) and BCP5616TA (gain group 16). For higher voltage requirements, consider the BCP57 series if PNP polarity is acceptable. Verify pinout compatibility in the SOT223 package before substitution.