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The BCP5616H6327XTSA1 is an NPN silicon audio frequency transistor from Infineon Technologies, designed for driver and output stages. It operates in a SOT-223 package with four pins (Collector, Base, Emitter, Collector). Key electrical ratings include a collector-emitter voltage of 80 V, collector-base voltage of 100 V, and emitter-base voltage of 5 V. The device supports a continuous collector current of 1 A and peak current of 1.5 A. Total power dissipation reaches 2 W at case temperatures up to 120°C. DC current gain ranges from 100 to 250 at 150 mA. Transition frequency is typically 100 MHz.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with SOT-223 footprint requirements. Confirm RoHS compliance status through the manufacturer's latest environmental declarations before finalizing procurement orders.
Select this component when an NPN transistor with 80 V collector-emitter voltage and 1 A continuous current rating is required. The SOT-223 package provides robust thermal performance for power dissipation up to 2 W. Consider the high DC current gain range for amplifier designs requiring significant signal amplification without excessive base drive current.
This part belongs to the BCP54/BCP55/BCP56 family of NPN silicon AF transistors. Complementary PNP types are available as BCP51, BCP52, and BCP53. The series is characterized by high current handling and low saturation voltages, making it a standard choice for general-purpose audio and switching applications in consumer electronics.
Direct replacements within the same family include BCP54 and BCP55 variants, though voltage ratings differ. Verify pinout compatibility in the SOT-223 package. Check if lower voltage ratings of BCP54 (45 V) or different gain bands of BCP55 (60 V) meet the specific circuit requirements.