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Product Detailed Parameters
- Description：TRANS NPN 80V 1A SOT-223-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：80 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 150mA, 2V
- Power - Max：2 W
- Frequency - Transition：125MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-3
- Grade：-
- Qualification：-
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Overview
The Diodes Incorporated BCP5616TC is an NPN silicon planar medium power transistor housed in a SOT-223-4 surface-mount package. It features a collector-emitter voltage (VCEO) of 80 V, a collector-base voltage (VCBO) of 100 V, and a continuous collector current (IC) of 1 A. The device offers a transition frequency (fT) of 125 MHz and supports power dissipation up to 2 W at 25°C ambient temperature. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Designed for audio frequency drivers and output stages
- Provides high collector current capability with low saturation voltage
- Utilizes silicon planar technology for robust performance
Applications
- Audio frequency driver circuits
- Output stage configurations
- Linear voltage regulators
- MOSFET drivers
Procurement Notes
Verify the specific suffix 'TC' against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications or moisture sensitivity levels. Ensure the ordering part number matches the required hFE binning for the -16 variant. Cross-reference RoHS compliance status directly with the latest datasheet revision to meet environmental regulatory requirements.
Selection Notes
Select this component when an NPN transistor with 80 V collector-emitter voltage and 1 A continuous current capacity is required in a compact SOT-223 footprint. Consider the complementary PNP type BCP53 for push-pull applications. Evaluate thermal management needs as power dissipation ratings depend on ambient temperature conditions and PCB copper area availability.
Part Context
This device belongs to the BCP56 series of NPN medium power transistors manufactured by Diodes Incorporated. It is part of a family that includes variants with different current gain groupings, such as the BCP56-10. The series is designed for general-purpose switching and amplification tasks requiring reliable performance in surface-mount assemblies.
Replacement Considerations
The BCP56-16T1G from ON Semiconductor serves as a verified functional substitute. Both devices share identical electrical characteristics, including 80 V VCEO, 1 A IC, and SOT-223 packaging. Verify pinout compatibility and thermal resistance values before implementation.
