BCP56T1G

Overview

The BCP56T1G is an NPN Silicon Epitaxial Transistor from the BCP56 Series, designed for medium power surface mount applications. It features a maximum collector current of 1.0 A and a collector-emitter voltage rating of 80 Vdc. The device offers a DC current gain (hFE) ranging from 25 to 250 depending on operating conditions, with a transition frequency (fT) of 130 MHz at 10 mA. Total power dissipation is rated at 1.5 W at 25°C ambient temperature, derating by 12 mW/°C above this threshold. The component operates within a junction temperature range of -65°C to +150°C.

Feature Summary

• Designed specifically for audio amplifier applications utilizing high current capabilities.
• SOT-223 package construction allows for wave or reflow soldering while absorbing thermal stress to protect the die.
• Available in lead-free, halogen-free, and RoHS compliant packaging configurations.

Applications

• Audio amplifier circuits
• Medium power surface mount applications

Procurement Notes

Verify the specific ordering suffix to confirm reel specifications; T1G indicates a 7-inch tape and reel containing 1000 units. Confirm that the S or NSV prefix is required if automotive qualification under AEC-Q101 standards is necessary. Ensure compliance with Pb-Free and Halogen-Free requirements as stated in the datasheet. Check for discontinued status warnings regarding related variants like BCP56-10T3G before finalizing procurement.

Selection Notes

Select the BCP56T1G when a single NPN transistor with 1A continuous current capability is required for surface mount designs. Consider the BCP53T1G as the PNP complement for complementary push-pull configurations. Evaluate the hFE binning requirements against application needs, as gain varies significantly across different collector currents. Verify thermal management strategies given the 1.5W dissipation limit and 83.3°C/W thermal resistance.

Part Context

This component belongs to the BCP56 Series of NPN Silicon Epitaxial Transistors manufactured by onsemi. It is housed in the SOT-223 package (Case 318E), which provides a robust solution for medium power applications. The series includes various gain bins and complementary PNP devices, such as the BCP53 series, to support diverse circuit design requirements.

Replacement Considerations

The BCP53T1G serves as the designated PNP complement within the same series. For alternative sourcing, verify pinout compatibility and electrical ratings against other NPN transistors in the SOT-223 package. Note that the BCP56-10T3G variant is listed as discontinued and not recommended for new designs.

FAQ

What is the maximum peak collector current for the BCP56T1G?

The maximum peak collector current (ICM) is specified as 2 Adc, referencing the Safe Operating Area curve.

How does the DC current gain vary with collector current?

The minimum DC current gain (hFE) ranges from 25 at 5.0 mA to 63 at 500 mA, with maximum values reaching up to 250 depending on the specific test conditions.

Is the BCP56T1G qualified for automotive applications?

Standard BCP56T1G parts are not explicitly stated as AEC-Q101 qualified. Only devices with the S or NSV prefix are noted as AEC-Q101 qualified and PPAP capable.