BCP56T3G

Overview

The BCP56T3G is an NPN Silicon Epitaxial Transistor from the BCP56 Series, designed for medium power surface mount applications. It features a collector-emitter voltage (VCEO) of 80 Vdc and a continuous collector current (IC) of 1 Adc. The device supports a peak collector current (ICM) of 2 Adc and total power dissipation (PD) of 1.5 W at 25°C ambient temperature. It operates within a junction temperature range of -65 to 150°C. The transistor is housed in a SOT-223 package with four pins.

Feature Summary

• Designed for audio amplifier applications utilizing high current capability
• SOT-223 package formed leads absorb thermal stress during wave or reflow soldering
• AEC-Q101 Qualified and PPAP Capable for automotive applications

Applications

• Audio amplifier circuits
• Medium power surface mount applications
• Automotive electronics requiring AEC-Q101 qualification

Procurement Notes

Verify the specific ordering suffix T3G corresponds to the 4000-unit tape and reel configuration on a 13-inch reel. Confirm that the 'BH' marking code matches the required assembly date codes. Ensure compliance with Pb-Free and RoHS requirements if environmental standards are mandated for the target application.

Selection Notes

Select this component when a single NPN transistor with 80 V collector-emitter voltage and 1 A continuous current rating is required. The SOT-223 package is suitable for medium power dissipation needs up to 1.5 W. Consider the BCP53T1G as the PNP complement if complementary pairs are needed for push-pull configurations.

Part Context

This part belongs to the BCP56 Series of NPN Silicon Epitaxial Transistors manufactured by onsemi. The series is specifically engineered for audio amplifier applications and medium power surface mount designs. The T3G suffix indicates the packaging format, distinguishing it from other reel sizes available in the same family.

Replacement Considerations

BCP53T1G serves as the designated PNP complement within the same series.