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Product Detailed Parameters
- Description：TRANS NPN 20V 1A SOT-223-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：20 V
- Vce Saturation (Max) @ Ib, Ic：500mV @ 100mA, 1A
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 500mA, 1V
- Power - Max：2 W
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-261-4, TO-261AA
- Supplier Device Package：SOT-223-3
- Grade：-
- Qualification：-
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Overview
The BCP6825TC is an NPN silicon planar medium power transistor manufactured by Diodes Incorporated, housed in a SOT-223 surface-mount package. It features a collector-emitter voltage of 20 V and a continuous collector current of 1 A. The device supports a peak pulse current of 2 A with a maximum power dissipation of 2 W at 25°C ambient temperature. Electrical characteristics include a minimum DC current gain (hFE) of 160 at 500 mA and a transition frequency of 100 MHz.
Feature Summary
- Suitable for audio frequency drivers and output stages
- High collector current capability
- Low collector-emitter saturation voltage
Applications
- Audio frequency driver circuits
- Output stage configurations
- General-purpose switching applications
Procurement Notes
Verify the specific suffix 'TC' against official manufacturer documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the Diodes Incorporated datasheet revision issued in February 1996. Confirm RoHS compliance status through the manufacturer's current product environmental declaration before procurement.
Selection Notes
Select this component for applications requiring high current handling and low saturation voltage in a compact surface-mount form factor. Compare the hFE range of 160 to 400 against circuit requirements. Consider the complementary BCP69 PNP transistor for push-pull or bridge configurations where matched performance is necessary.
Part Context
This part belongs to the BCP68 series of NPN medium power transistors designed for general-purpose amplification and switching. The series is characterized by robust current handling and thermal stability within a -55°C to +150°C junction temperature range. It serves as a standard discrete semiconductor solution for consumer electronics and industrial control systems.
Replacement Considerations
Direct substitutes include the BCP68-25 from other manufacturers such as Nexperia or Philips Semiconductors. Verify pinout compatibility and electrical parameter equivalence, specifically VCEO and IC ratings, before implementation.
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 20 V.
Is there a complementary PNP transistor available?
Yes, the BCP69 is the designated complementary PNP type.
What is the static forward current transfer ratio range?
The hFE ranges from 160 to 400 when measured at IC=500mA and VCE=1V.
