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The BCP68T1G is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It is housed in a surface-mount SOT-223-4 package designed for high current and low voltage applications. Key electrical parameters include a maximum collector current of 1 A, a collector-emitter voltage (VCEO) of 20 V, and a collector-base voltage (VCBO) of 25 V. The device features a minimum DC current gain (hFE) of 50, a transition frequency (fT) of 60 MHz, and a power dissipation rating of 1.5 W at 25°C. It operates within a junction temperature range of -65°C to +150°C.
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Select this component when a single NPN transistor with 1 A current capacity and 20 V breakdown voltage is required in a compact SMD form factor. Consider the complementary BCP69T1G if a matched pair is needed for output stages. Evaluate thermal management needs as the 1.5 W dissipation rating requires adequate PCB copper area or heatsinking for sustained operation above ambient temperatures.
The BCP68T1G belongs to the BCP68 series of bipolar junction transistors from onsemi. This series is engineered for general-purpose use in consumer, industrial, and automotive sectors. The device utilizes silicon epitaxial planar technology to ensure reliable performance under varying thermal conditions while maintaining compatibility with standard surface mount manufacturing processes.
The BCP69T1G serves as the direct PNP complementary counterpart within the same series. Designers requiring identical mechanical dimensions and similar electrical characteristics should verify pinout compatibility when substituting between NPN and PNP variants in existing layouts.
The BCP69T1G is the designated PNP complementary transistor to the BCP68T1G NPN device.
Yes, the component is AEC-Q101 qualified, making it suitable for automotive electronic applications.
The maximum power dissipation is rated at 1.5 W at an ambient temperature of 25°C, with derating required at higher temperatures.