BCP68T1G

BCP68T1G

$0.52
  • Description:TRANS NPN 20V 1A SOT223
  • Series:-

SKU:4a5b15c6cdde Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 20V 1A SOT223
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:85 @ 500mA, 1V
  • Power - Max:1.5 W
  • Frequency - Transition:60MHz
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223 (TO-261)
  • Grade:-
  • Qualification:-

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BCP68T1G

Overview

The BCP68T1G is a single NPN silicon epitaxial planar transistor manufactured by onsemi. It is housed in a surface-mount SOT-223-4 package designed for high current and low voltage applications. Key electrical parameters include a maximum collector current of 1 A, a collector-emitter voltage (VCEO) of 20 V, and a collector-base voltage (VCBO) of 25 V. The device features a minimum DC current gain (hFE) of 50, a transition frequency (fT) of 60 MHz, and a power dissipation rating of 1.5 W at 25°C. It operates within a junction temperature range of -65°C to +150°C.

Feature Summary

  • High current handling capability with a continuous collector current rating of 1 A.
  • SOT-223-4 surface mount package optimized for thermal performance and automated assembly.
  • Complementary pairing available with the PNP BCP69T1G for push-pull circuit designs.
  • Qualified for automotive applications through AEC-Q101 certification.

Applications

  • General-purpose switching circuits
  • Low voltage amplifier stages
  • Automotive electronics modules

Procurement Notes

Verify the specific ordering suffix matches the required tape and reel configuration. Confirm RoHS compliance status and REACH SVHC declarations against current regulatory requirements. Ensure the component source is an authorized distributor to guarantee authenticity. Check for any recent Product Change Notifications regarding packaging or material updates before finalizing procurement orders.

Selection Notes

Select this component when a single NPN transistor with 1 A current capacity and 20 V breakdown voltage is required in a compact SMD form factor. Consider the complementary BCP69T1G if a matched pair is needed for output stages. Evaluate thermal management needs as the 1.5 W dissipation rating requires adequate PCB copper area or heatsinking for sustained operation above ambient temperatures.

Part Context

The BCP68T1G belongs to the BCP68 series of bipolar junction transistors from onsemi. This series is engineered for general-purpose use in consumer, industrial, and automotive sectors. The device utilizes silicon epitaxial planar technology to ensure reliable performance under varying thermal conditions while maintaining compatibility with standard surface mount manufacturing processes.

Replacement Considerations

The BCP69T1G serves as the direct PNP complementary counterpart within the same series. Designers requiring identical mechanical dimensions and similar electrical characteristics should verify pinout compatibility when substituting between NPN and PNP variants in existing layouts.

FAQ

What is the complementary transistor to the BCP68T1G?

The BCP69T1G is the designated PNP complementary transistor to the BCP68T1G NPN device.

Is the BCP68T1G qualified for automotive use?

Yes, the component is AEC-Q101 qualified, making it suitable for automotive electronic applications.

What is the maximum power dissipation of the BCP68T1G?

The maximum power dissipation is rated at 1.5 W at an ambient temperature of 25°C, with derating required at higher temperatures.

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