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The onsemi BCP69 is a PNP general-purpose amplifier transistor designed for medium power applications requiring collector currents up to 1.0A. It features a -20V collector-emitter voltage rating and supports continuous collector currents of -1.5A. The device operates within a junction temperature range of -55°C to +150°C, with total device dissipation rated at 1.0W. Packaged in SOT-223, it offers thermal resistance from junction to ambient of 125 °C/W.
Verify the specific datasheet revision and manufacturer origin, as the BCP69 part number has been produced by multiple vendors including Fairchild Semiconductor and onsemi. Confirm that the component matches the required pinout configuration (Base, Collector, Emitter) for the SOT-223 package. Ensure compliance with any specific process node requirements if sourcing from alternative manufacturers.
Select this component for designs needing a PNP transistor with a -20V VCEO rating and high current capability. Consider the SOT-223 package for surface mount assembly where moderate power dissipation is sufficient. Evaluate the thermal resistance characteristics against the expected ambient temperature and power load to ensure operation remains within the specified junction temperature limits.
The BCP69 belongs to a series of PNP medium power transistors often used in linear voltage regulators and power management circuits. It serves as a complementary device to NPN counterparts like the BCP68. The SOT-223 package provides a balance between power handling and compact footprint, suitable for various consumer and industrial electronics.
BCP69T1G
The maximum collector-emitter voltage (VCEO) is -20 V.
The DC current gain (hFE) ranges from a minimum of 50 to a maximum of 375, depending on the collector current conditions.
The BCP69 is available in the SOT-223 surface-mount package.