BCP69-25E6327

BCP69-25E6327

$0.14
  • Description:TRANS 20V 1A PG-SOT223-4
  • Series:-

SKU:feb5bfe8a571 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 20V 1A PG-SOT223-4
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Transistor Type:-
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):20 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 100mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 500mA, 1V
  • Power - Max:3 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:PG-SOT223-4
  • Grade:Automotive
  • Qualification:AEC-Q101

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BCP69-25E6327

Overview

The BCP69-25E6327 is a PNP silicon power bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 25 V. The device utilizes a SOT-89 surface-mount package with three terminals. Key electrical characteristics include a minimum DC current gain (hFE) of 85 and a transition frequency of 100 MHz. Designed for amplifier applications, it operates within standard temperature ranges and complies with RoHS standards.

Feature Summary

  • PNP polarity configuration suitable for high-side switching or complementary pairs
  • Surface-mount SOT-89 package design for automated assembly
  • Integrated thermal management via exposed collector pad

Applications

  • General-purpose linear amplification circuits
  • Complementary driver stages in audio or signal processing
  • Switching applications requiring moderate current handling

Procurement Notes

Verify the specific suffix E6327 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the exact pinout and marking codes defined in the datasheet. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through the material content sheet provided by Infineon.

Selection Notes

Select this component when a PNP transistor with 1 A continuous current capability and 25 V voltage rating is required. The SOT-89 package offers a balance between power dissipation and board space efficiency. Consider the hFE range and transition frequency for amplifier linearity requirements. Evaluate thermal resistance parameters if operating near maximum current limits in enclosed environments.

Part Context

This component belongs to Infineon's discrete bipolar transistor portfolio, specifically designed for general-purpose power applications. It complements NPN counterparts in push-pull configurations. The product line emphasizes reliability and consistent performance across industrial and consumer electronics sectors. Infineon provides comprehensive support documents including datasheets and application notes for integration.

FAQ

What is the maximum collector-emitter voltage for the BCP69-25E6327?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 25 V.

Does the BCP69-25E6327 support surface-mount technology?

Yes, it is housed in a SOT-89 surface-mount package designed for automated PCB assembly.

What is the minimum DC current gain specified for this transistor?

The minimum DC current gain (hFE) is specified as 85 under standard test conditions.

BCP69-25E6327BCP69-25E6327
$0.14
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