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The BCP69-25E6327 is a PNP silicon power bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 25 V. The device utilizes a SOT-89 surface-mount package with three terminals. Key electrical characteristics include a minimum DC current gain (hFE) of 85 and a transition frequency of 100 MHz. Designed for amplifier applications, it operates within standard temperature ranges and complies with RoHS standards.
Verify the specific suffix E6327 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the exact pinout and marking codes defined in the datasheet. Cross-reference the manufacturer part number with authorized distributors to avoid counterfeit components. Confirm RoHS compliance status through the material content sheet provided by Infineon.
Select this component when a PNP transistor with 1 A continuous current capability and 25 V voltage rating is required. The SOT-89 package offers a balance between power dissipation and board space efficiency. Consider the hFE range and transition frequency for amplifier linearity requirements. Evaluate thermal resistance parameters if operating near maximum current limits in enclosed environments.
This component belongs to Infineon's discrete bipolar transistor portfolio, specifically designed for general-purpose power applications. It complements NPN counterparts in push-pull configurations. The product line emphasizes reliability and consistent performance across industrial and consumer electronics sectors. Infineon provides comprehensive support documents including datasheets and application notes for integration.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 25 V.
Yes, it is housed in a SOT-89 surface-mount package designed for automated PCB assembly.
The minimum DC current gain (hFE) is specified as 85 under standard test conditions.