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The onsemi BCP69T1G is a PNP silicon epitaxial planar transistor housed in a SOT-223 surface-mount package. It features a maximum collector current of -1 A and a collector-emitter voltage rating of -20 V. The device has a power dissipation capacity of 1.5 W at 25°C, with a transition frequency of 60 MHz and a minimum DC current gain (hFE) of 50. It operates within a junction temperature range of -65°C to +150°C and holds AEC-Q101 automotive qualification.
Verify the specific ordering suffix when sourcing this component. The provided model designation lacks the standard 'G' suffix found in official datasheets and distributor listings. Confirm whether the required part is BCP69T1G or if a specific variant without the suffix exists in the manufacturer's active portfolio to ensure correct electrical specifications and compliance status.
Select this component for designs requiring a single PNP transistor with 1 A continuous current capacity in a compact surface-mount form factor. Ensure the circuit layout accommodates the thermal requirements of the SOT-223 package, as power dissipation decreases above 25°C. Consider the complementary BCP68T1G if an NPN counterpart is needed for push-pull configurations.
This device belongs to the BCP69 series of PNP transistors designed for general-purpose low-voltage applications. It serves as the PNP complement to the BCP68 NPN transistor, allowing for matched pairs in symmetric circuit designs. The series is engineered for efficient heat transfer and reliable operation in consumer and industrial electronics.
BCP69T1G
The complementary NPN transistor in this series is the BCP68.
Yes, the device is AEC-Q101 qualified and supports PPAP capabilities for automotive use.