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Product Detailed Parameters
- Description：TRANS PNP DARL 30V 1.2A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：PNP - Darlington
- Current - Collector (Ic) (Max)：1.2 A
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：1V @ 100µA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：20000 @ 100mA, 5V
- Power - Max：350 mW
- Frequency - Transition：220MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BCV26 is a PNP silicon small-signal transistor manufactured by onsemi. It features a Darlington configuration housed in a TO-236AB (SOT-23) plastic package. The device supports a maximum collector current of 500 mA and a collector-emitter voltage of 30 V. It operates within a temperature range of -65°C to +150°C. Key electrical specifications include a minimum DC current gain of 20,000 and a collector-emitter saturation voltage of 1.5 V at specified conditions.
Feature Summary
- Darlington configuration for high current gain
- Small signal general-purpose application
- Surface-mount SOT-23 packaging
Applications
- General purpose switching
- Amplifier circuits
- Driver stages
Procurement Notes
Verify the manufacturer origin carefully as the BCV26 part number is historically associated with NXP Semiconductors. Confirm if the specific onsemi listing represents a valid cross-reference or equivalent replacement rather than a direct production part from that specific brand lineage. Check datasheet revision dates and pinout compatibility before integration into designs requiring this specific legacy component identifier.
Selection Notes
Select this component when high current gain is required in a compact surface-mount footprint. The Darlington structure provides significant amplification suitable for low-level signal processing. Ensure the 30 V voltage rating meets circuit requirements. Consider thermal management capabilities inherent to the SOT-23 package for power dissipation limits during continuous operation.
Part Context
This component belongs to the category of bipolar junction transistors (BJTs). Specifically, it is classified as a small-signal transistor designed for general-purpose applications. The Darlington pair architecture distinguishes it from single-transistor variants by offering substantially higher beta values, making it ideal for driving loads with minimal input current.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with NXP equivalents may be necessary due to historical branding associations.
