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The BCV27TC is an NPN silicon planar Darlington transistor manufactured by Diodes Incorporated. It features a collector-emitter breakdown voltage of 30 V and a continuous collector current of 500 mA. The device operates in a surface-mount SOT-23-3 package with a maximum power dissipation of 330 mW. Key electrical characteristics include a transition frequency of 170 MHz and a DC current gain (hFE) of 1V at 20,000 when tested at 100 mA with a collector-emitter voltage of 5 V.
Verify component status carefully as the BCV27TC is listed as obsolete and no longer manufactured by Diodes Incorporated. Confirm availability through authorized distributors or check for valid substitute part numbers before finalizing procurement plans to ensure supply chain continuity.
Select this component only if legacy compatibility is required or if specific historical design parameters match the application needs. Evaluate alternative active components that offer similar electrical specifications and package dimensions to mitigate risks associated with end-of-life products.
This component belongs to the single bipolar transistor category from Diodes Incorporated. It utilizes NPN Darlington technology within a standard SOT-23-3 footprint, designed for compact electronic designs requiring reliable switching and amplification functions in consumer and industrial electronics.
The MMBTA14-7-F is identified as a similar available substitute part number for the obsolete BCV27TC. Verify pinout compatibility and electrical parameter alignment before implementation.