BCV47QTA

Overview

The BCV47QTA is an NPN Darlington transistor manufactured by Diodes Incorporated in a SOT-23 package. It features a collector-emitter breakdown voltage (BVCEO) of 60 V and supports a continuous collector current (IC) of 500 mA. The device offers a high static forward current transfer ratio (hFE) exceeding 10,000 at IC = 100 mA and VCE = 5 V. Electrical characteristics include a collector-base breakdown voltage (BVCBO) of 80 V and a transition frequency (fT) of 170 MHz at IC = 50 mA. Thermal resistance from junction to ambient is 403 °C/W under standard conditions.

Feature Summary

• High DC current gain exceeding 10,000 for efficient signal amplification
• AEC-Q101 qualified with PPAP capability for automotive reliability
• Totally lead-free and fully RoHS compliant construction

Applications

• Automotive circuits requiring specific change control
• General purpose switching applications
• Signal amplification stages

Procurement Notes

Verify the ordering suffix TA corresponds to the 3,000-unit reel packaging configuration. Confirm that the component meets AEC-Q101 qualification standards if utilized in automotive systems. Ensure compliance with IATF 16949 manufacturing facility requirements for relevant supply chain specifications.

Selection Notes

Select this component when high current gain is required within a compact surface-mount footprint. The 60 V rating suits low-voltage switching tasks. Verify thermal management capabilities against the specified power dissipation limits for the target operating environment.

Part Context

This part belongs to the BCV47Q series of NPN Darlington transistors designed for automotive-grade applications. It is complemented by the BCV46Q PNP type. The series utilizes a SOT-23 package suitable for automated surface-mount assembly processes.

Replacement Considerations

BCV47QTC serves as a parameter-equivalent alternative with different reel packaging quantities.