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The BCV61BE6327HTSA1 is an NPN silicon dual bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-143-4 package and holds AEC-Q100 automotive qualification. Key electrical parameters include a maximum DC collector current of 100 mA, a collector-emitter voltage (VCEO) of 30 V, and a collector-base voltage (VCBO) of 30 V. The device features a gain-bandwidth product (fT) of 250 MHz and a power dissipation rating of 300 mW. It operates within a temperature range of -65°C to +150°C.
Verify component authenticity through authorized distribution channels or direct manufacturer engagement. Confirm that the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and check for any relevant environmental declarations prior to integration into final assemblies.
Select this component when a dual NPN topology is required within a small footprint. The AEC-Q100 certification makes it suitable for automotive environments. Consider the 30 V voltage limit and 100 mA current capacity against circuit requirements. Evaluate thermal management needs given the 300 mW power dissipation limit in the SOT-143-4 package.
This part belongs to the BCV61 series of dual NPN transistors from Infineon Technologies. It shares identical electrical characteristics and physical dimensions with the BCV61CE6327HTSA1 variant, differing primarily in internal binning or manufacturing lot specifications rather than functional performance metrics.
The BCV61CE6327HTSA1 is a confirmed substitute with identical electrical specifications and pinout compatibility.