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The BCV61BE6433HTMA1 is an NPN silicon double bipolar junction transistor (BJT) from the BCV61 series, manufactured by Infineon Technologies. It features a SOT-143-4 surface-mount package and supports AEC-Q100 automotive qualification. Key electrical parameters include a maximum collector-emitter voltage of 30 V, a continuous collector current of 100 mA, and a power dissipation of 300 mW. The device offers a DC current gain range of 420 to 800 and a transition frequency of 250 MHz, operating within a temperature range of -65°C to +150°C.
Verify component authenticity through authorized distribution channels due to end-of-life status. Confirm package integrity upon receipt as the SOT-143-4 form factor requires precise handling. Cross-reference datasheet revisions to ensure compatibility with existing design specifications before final integration into production workflows.
Select this component when dual NPN functionality is required in space-constrained automotive applications. The high current gain suits precision analog tasks, while the 30 V rating limits suitability for higher voltage environments. Ensure PCB layout accommodates the specific pinout of the SOT-143-4 package for proper thermal and electrical performance.
This part belongs to the BCV61 series of dual NPN transistors designed for general-purpose and automotive use. It shares family characteristics with other BCV61 variants but is distinguished by its specific gain binning and packaging. The E6433 suffix indicates tape-and-reel packaging for automated assembly processes.
Public confirmed substitute part numbers are not available in the provided documentation.