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The BCV62AE6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-143-4 surface-mount package and holds AEC-Q100 automotive qualification. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 30 V, a maximum collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 6 V. The device supports a continuous collector current of 100 mA with a peak rating of 200 mA. DC current gain (hFE) ranges from 125 to 220, while the transition frequency (fT) reaches 250 MHz. Power dissipation is rated at 300 mW, and the saturation voltage is 250 mV. Operating temperatures span from -65 °C to +150 °C.
Verify component authenticity through authorized distribution channels due to potential counterfeiting risks. Confirm that the specific suffix HTSA1 matches the required reel or cut-tape packaging format for your manufacturing line. Ensure compliance with RoHS directives as indicated in official documentation before integration into final assemblies.
Select this component when a PNP BJT with 30 V voltage ratings and automotive qualification is required. Compare hFE gain bands and fT specifications against circuit requirements to ensure adequate signal bandwidth. Verify thermal management capabilities given the 300 mW power dissipation limit in the SOT-143-4 package.
This part belongs to the BCV62 series of general-purpose PNP transistors. It shares the core BCV62 architecture but utilizes the E6327HTSA1 suffix to denote specific automotive qualification and Infineon's standard tape-and-reel packaging configuration for high-volume production environments.
Direct substitutes must match the PNP polarity, 30 V VCEO rating, SOT-143-4 package, and AEC-Q100 qualification. Verify pinout compatibility and hFE/gain characteristics to ensure functional equivalence in existing circuit designs without modification.